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0.4-1.6 < Ω.cm >Resistivity≤6E + 17 < at/cm³ >Oxygen Content≤5E + 16 < at/cm³ > Carbon Content ≥1000 < µs > Minority Carrier Lifetime
Materials Performance
Item
Specification
Inspection Method
Growth Mode
CZ
--
Crystallinity
Monocrystalline
--
Physical dimensions
M10 :182.2* 182.2*φ247mm
M10-L :182.2* 183.75*φ247mm
Wafer inspection system
Thickness
130±8 µm
Wafer inspection system
Item:
Growth Mode
Specification:
CZ
Inspection Method:
--
Item:
Crystallinity
Specification:
Monocrystalline
Inspection Method:
--
Item:
Physical dimensions
Specification:
M10 :182.2* 182.2*φ247mm
M10-L :182.2* 183.75*φ247mm
Inspection Method:
Wafer inspection system
Item:
Thickness
Specification:
130±8 µm
Inspection Method:
Wafer inspection system
Electrical Property
Item
Specification
Inspection Method
Electrical resistivity
0.4-1.6 Ω.cm
Wafer inspection system
Minority carrier lifetime
≥1000μs
Transient
with injection level: 5E14 cm-3（Sinton BCT-400 ）
Oxygen content
≤6E + 17 at/cm³
FTIR spectrometer
Carbon content
≤ 5E + 16 at/cm³
FTIR spectrometer
Item:
Electrical resistivity
Specification:
0.4-1.6 Ω.cm
Inspection Method:
Wafer inspection system
Item:
Minority carrier lifetime
Specification:
≥1000μs
Inspection Method:
Transient
with injection level: 5E14 cm-3（Sinton BCT-400 ）
Item:
Oxygen content
Specification:
≤6E + 17 at/cm³
Inspection Method:
FTIR spectrometer
Item:
Carbon content
Specification:
≤ 5E + 16 at/cm³
Inspection Method:
FTIR spectrometer
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