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0.4-1.1 < Ωcm >Resistivity≤7.5E + 17 < at/cm³ >Oxygen Content≥70 < µs > Minority Carrier Lifetime≤ 5E + 16 < at/ cm³ >Carbon Content
Materials Performance
Item
Specification
Inspection Method
Growth Mode
CZ
--
Crystallinity
Monocrystalline
--
Conductive Type
P-type
P/N type tester
Size
M10: 182.2* 182.2*φ247mm
G12 : 210* 210*φ295mm
Wafer inspection system
Thickness
M10：155 ± 10 μm
150 ± 10 μm
G12：150 ± 10 μm
Wafer inspection system
Item:
Growth Mode
Specification:
CZ
Inspection Method:
--
Item:
Crystallinity
Specification:
Monocrystalline
Inspection Method:
--
Item:
Conductive Type
Specification:
P-type
Inspection Method:
P/N type tester
Item:
Size
Specification:
M10: 182.2* 182.2*φ247mm
G12 : 210* 210*φ295mm
Inspection Method:
Wafer inspection system
Item:
Thickness
Specification:
M10：155 ± 10 μm
150 ± 10 μm
G12：150 ± 10 μm
Inspection Method:
Wafer inspection system
Electrical Property
Item
Specification
Inspection Method
Electrical resistivity
0.4-1.1 Ω.cm
Wafer inspection system
Minority carrier lifetime
≥70us
QSSPC/Transient
with injection level: 1E15 cm-3（Sinton BCT-400 ）
Oxygen content
≤7.5E + 17 at/cm³
FTIR spectrometer
Carbon content
≤ 5E + 16 at/cm³
FTIR spectrometer
Item:
Electrical resistivity
Specification:
0.4-1.1 Ω.cm
Inspection Method:
Wafer inspection system
Item:
Minority carrier lifetime
Specification:
≥70us
Inspection Method:
QSSPC/Transient
with injection level: 1E15 cm-3（Sinton BCT-400 ）
Item:
Oxygen content
Specification:
≤7.5E + 17 at/cm³
Inspection Method:
FTIR spectrometer
Item:
Carbon content
Specification:
≤ 5E + 16 at/cm³
Inspection Method:
FTIR spectrometer
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