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0.7-1.4 < Ω.cm>Resistivity≤6E+17 < at/cm³ >Oxygen Content≤5E+16 <at/cm³ >Carbon Content ≥1000 <μs>Minority Carrier Lifetime
Materials Performance
Item
Specification
Inspection Method
Growth Mode
CZ
--
Crystallinity
Monocrystalline
--
Geometric dimensions
G10-L：182.2*183.75*φ256mm
M11-L：182.2*191.6*φ262.5
Wafer inspection system
Thickness
130±8μm
Wafer inspection system
Item:
Growth Mode
Specification:
CZ
Inspection Method:
--
Item:
Crystallinity
Specification:
Monocrystalline
Inspection Method:
--
Item:
Geometric dimensions
Specification:
G10-L：182.2*183.75*φ256mm
M11-L：182.2*191.6*φ262.5
Inspection Method:
Wafer inspection system
Item:
Thickness
Specification:
130±8μm
Inspection Method:
Wafer inspection system
Electrical Property
Item
Specification
Inspection Method
Resistivity
0.7-1.4 Ω.cm
Wafer inspection system
Minority Carrier Lifetime
≥1000/μs
Transient
with injection level: 5E14 cm-3（Sinton BCT-400 ）
Oxygen Content
≤6E+17 at/cm³
FTIR spectrometer
Carbon Content
≤5E+16 at/cm³
FTIR spectrometer
Item:
Resistivity
Specification:
0.7-1.4 Ω.cm
Inspection Method:
Wafer inspection system
Item:
Minority Carrier Lifetime
Specification:
≥1000/μs
Inspection Method:
Transient
with injection level: 5E14 cm-3（Sinton BCT-400 ）
Item:
Oxygen Content
Specification:
≤6E+17 at/cm³
Inspection Method:
FTIR spectrometer
Item:
Carbon Content
Specification:
≤5E+16 at/cm³
Inspection Method:
FTIR spectrometer
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